The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 05, 1987
Filed:
Dec. 13, 1985
Olaleye A Aina, Columbia, MD (US);
Amir A Lakhani, Columbia, MD (US);
Allied Corporation, Morristown, NJ (US);
Abstract
A method of forming a semiconductor device having a non-alloyed contact layer. An active region is formed in a substrate and the non-alloyed contact layer is formed in the active region, the barrier height of source and drain electrodes for the non-alloyed contact layer being lower than the barrier height of the source and drain electrodes for the active region or the substrate. The preferred method of forming the non-alloyed contact layer is high dose implantation of an element selected in accordance with the substrate material. For example, if the substrate is GaAs the non-alloyed contact layer is formed by implanting In, and if the substrate is InP the non-alloyed contact layer is formed by implanting As or Sb.