The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 28, 1987
Filed:
Feb. 06, 1986
John S Lechaton, Wappingers Falls, NY (US);
Shashi D Malaviya, Fishkill, NY (US);
Dominic J Schepis, Wappingers Falls, NY (US);
Gurumakonda R Srinivasan, Poughkeepsie, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A fully isolated dielectric structure for isolating regions of monocrystalline silicon from one another and method for making such structure are described. The structure uses a combination of recessed oxide isolation with pairs of parallel, anisotropic etched trenches which are subsequently oxidized and filled to give complete dielectric isolation for regions of monocrystalline silicon. The anisotropic etching preferably etches a buried N+ sublayer under the mnocrystalline silicon region and then the trench structure is thermally oxidized to consume the remaining N+ layer under the monocrystalline region and to fully isolate the monocrystalline silicon region between pairs of such trenches.