The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 28, 1987

Filed:

Jun. 28, 1985
Applicant:
Inventor:

John B Pardee, Milwaukee, WI (US);

Assignee:

Eaton Corporation, Cleveland, OH (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B23K / ;
U.S. Cl.
CPC ...
2191 / ; 2191 / ; 2191 / ; 427 531 ;
Abstract

A semiconductor processing technique is provided for reacting with the surface (2) of a semiconductor wafer substrate (4) only along a predetermined pattern without a pass-through mask. Excimer pulsed ultraviolet laser radiation (32) is reflected by a mirror (10) having a selective pattern (12) thereon to direct laser radiation only along a predetermined pattern onto the substrate surface (2) as determined by the selective mirror pattern (12), to selectively activate designated areas of the substrate (4). There is further provided a method for forming a predetermined pattern on a cylindrical target (76) by directing excimer pulsed ultraviolet laser radiation (74) along the conical axis of a conical mirror (72) having a selective pattern thereon.


Find Patent Forward Citations

Loading…