The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 1987
Filed:
Dec. 15, 1982
Applicant:
Inventor:
Ronald R Bourassa, Colorado Springs, CO (US);
Assignee:
Inmos Corporation, Colorado Springs, CO (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
365154 ; 357 51 ; 357 59 ;
Abstract
An improved load resistor for a VLSI memory cell is formed in polysilicon by having P-type (such as boron) impurities in a middle region and n-type (such as phosphorous or arsenic) impurities on the sides, with the concentrations being in a range so that the thermal activation energy is below about 0.5 eV. Further, the middle region can be doped additionally with arsenic or phosphorous in an amount equal to or less than the boron. This gives good leakage current masking over a range of -55.degree. to +125.degree. C. without drawing excessive current, and is less sensitive to impurities.