The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 1987
Filed:
Jul. 03, 1980
Ngaiman Chau, Flintridge, CA (US);
John W Wu, Torrance, CA (US);
Neng-Tze Yang, Rancho Palos Verdes, CA (US);
Eugene J Mar, Sunnyvale, CA (US);
Xerox Corporation, Stamford, CT (US);
Abstract
In a high-density VLSI NMOS semiconductor such as a ROM, a voltage sensing mode amplifier in the output thereof, operative to sense relatively very low input signal swing bit read signals from the ROM with relative insensitivity to fabrication process variation. The structure includes a common gate amplifier for receiving the ROM signal, a very sensitive reference voltage circuit, a two-stage differential digital switching module operative to compatively receive the common gate and voltage reference signals to effectively distinguish relatively weak bit signals as read from the high-density VLSI ROM.