The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 1987
Filed:
Dec. 30, 1985
Applicant:
Inventors:
Hisanori Shioiri, Ueda, JP;
Mitsuhiro Kiuchi, Ueda, JP;
Mineo Takayama, Ueda, JP;
Toshio Homma, Ueda, JP;
Hiroshi Nagasaka, Ueda, JP;
Yoshikazu Kaneko, Togura, JP;
Assignee:
Kabushiki Kaisha Nagano Keiki Seisakusho, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B05D / ;
U.S. Cl.
CPC ...
427 38 ; 427100 ;
Abstract
Semiconductor piezoresistive devices can be obtained by the plasma CVD method, i.e., exposing a substrate to a plasma atmosphere produced from silicon hydride gas containing boron hydride to deposit on the substrate a thin film of crystalline silicon as a piezoresistive material. In accordance with this method, it is possible to form piezoresistive devices into IC's and also to impart excellent properties thereto.