The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 1987
Filed:
Mar. 25, 1985
Charles T Kroll, Jr, Raleigh, NC (US);
Geoffrey B Stephens, Cary, NC (US);
International Business Machines Corp., Armonk, NY (US);
Abstract
A dual electron injection structure (DEIS) and process for incorporating it into a semi-conductor structure, such as an E2PROM and/or NVRAM, is disclosed. The DEIS includes a composite structure formed from a layer of silicon rich nitride, a layer of silicon dioxide (SiO.sub.2) and a layer of silicon rich oxide. Preferably, a Plasma Enhanced Chemical Vapor Deposit (PECVD) method or a low pressure chemical vapor deposit (LPCVD) method is used to place the DEIS between the Poly 1 and Poly 2 devices of the semi-conductor structure.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile