The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 07, 1987

Filed:

Jul. 01, 1985
Applicant:
Inventor:

Mark S Birrittella, Phoenix, AZ (US);

Assignee:

Motorola Inc., Schaumburg, IL (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; G11C / ;
U.S. Cl.
CPC ...
357 34 ; 357 36 ; 357 44 ; 365154 ;
Abstract

An integrated bipolar RAM cell and process for its manufacture is disclosed. The RAM cell includes first and second cross-coupled bipolar transistors with first and second load elements coupled to the collectors of the first and second transistors, respectively. The load elements can be, for example, diode clamped resistors or lateral PNP transistors. The load elements include regions which are capable of injecting minority carriers into the collectors of the first and second transistors. To avoid charge storage problems and associated reduced switching speed while maintaining high voltage noise immunity, the charge injecting regions are fabricated having an integrated impurity doping less than or equal to about 1.times.10.sup.13 cm.sup.-2.


Find Patent Forward Citations

Birrittella, Mark. (1987). Bipolar ram cell and process (U.S. Patent No. 4656495). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4656495

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…