The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 07, 1987
Filed:
Apr. 17, 1986
Applicant:
Inventors:
Assignees:
Sharp Kabushiki Kaisha, Osaka, JP;
Japan Electronic Industry Development Association, Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
29571 ; 29578 ; 29584 ; 148175 ; 357-4 ;
Abstract
A thin film transistor comprises an insulating substrate, a semiconductor layer on the substrate, an electrically insulating oxide layer overlaying the semiconductor layer, and an electroconductive layer overlaying the oxide layer. The oxide layer is formed by oxidizing a portion of the semiconductor through a patterned opening in a photo resist. A method for the manufacture of the same is also disclosed.
Takafuji, Yutaka. (1987). Method for the manufacture of thin film transistors (U.S. Patent No. 4654959). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4654959
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile