The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 31, 1987
Filed:
Oct. 15, 1985
Takaaki Hagiwara, Kodaira, JP;
Yokichi Itoh, Hachioji, JP;
Ryuji Kondo, Kodaira, JP;
Yuji Yatsuda, Hachioji, JP;
Shinichi Minami, Kokubunji, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
A semiconductor nonvolatile memory wherein a unit cell is constructed of a series connection consisting of an MNOS (metal-silicon nitride-silicon dioxide-semiconductor) transistor whose gate electrode is made of polycrystalline silicon and an MOS (metal-silicon dioxide-semiconductor) transistor whose gate electrode is also made of polycrystalline silicon, such unit cells being arrayed in the form of a matrix, and wherein the gate electrode of the MOS transistor is used as a reading word line, the gate electrode of the MNOS transistor is used as a writing word line, and a terminal of either of the MNOS transistor and the MOS transistor connected in series and constituting the unit cell is used as a data line.