The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 31, 1987
Filed:
Oct. 01, 1984
Kimihiro Muraoka, Yokohama, JP;
Toyo Denki Seizo Kabushiki Kaisha, Tokyo, JP;
Abstract
A static induction thyristor having buried gate region having the concentration distribution of the impurity to have at least one stepwise variation viewed from the surface of the gate for improving dv/dt capability and for allowing more tolerance in the accuracy in the over-etching and also for keeping variation of the gate resistance small. A static induction thyristor having buried gate region and having the high concentration layer given selective junction depth and to make shallow for the location situated above or below the gate region and may be provided with insulating layer between anode or cathode electrode for further improving dv/dt capability and also the gate loss at turn-on in high frequency operation and for improving manufacturing yield.