The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 31, 1987
Filed:
Aug. 30, 1985
RCA, Inc., Ste-Anne-de-Bellevue, CA;
Abstract
The invention is an improved avalanche photodiode having reduced electrical noise arising from spurious surface generation of charge carriers. The avalanche photodiode includes active and neighboring regions adjacent a first surface of a semiconductor body with a gap region therebetween and a channel extending a distance into the semiconductor body from a portion of the second opposed surface opposite the gap region. A P-N junction is formed between regions of opposite conductivity type including a portion thereof over the channel. Since the dopant concentration at the junction is less over the channel, the local avalanche gain over the channel is less, thereby reducing the noise contribution from carriers generated in the gap region.