The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 31, 1987
Filed:
Mar. 07, 1985
Alfred H Van Ommen, Eindhoven, NL;
U.S. Philips Corporation, New York, NY (US);
Abstract
A method of simultaneously manufacturing semiconductor regions having different doping concentrations, for example, for obtaining semiconductor resistors having differences values. Due to difference in the rate of oxidation, oxide edges of different widths can be formed by oxidation of n-type silicon regions thus obtained. According to the invention, ion implantation or deposition takes place through doping windows for each of which the ratio between the window surface area and the surface area to be doped is different. Subsequently, homogeneous doping concentrations are obtained by diffusion.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile