The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 1987
Filed:
Jul. 09, 1985
Applicant:
Inventor:
Masaru Hashimoto, Ayase, JP;
Assignee:
Tokyo Shibaura Denki Kabushiki Kaisha, Kawasaki, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 34 ; 357 20 ; 357 48 ; 357 86 ;
Abstract
A semiconductor device capable of suppressing the influence of a parasitic pnp transistor caused when an npn transistor operates in saturation range in such a way that a p-type impurity region is formed in the outer layer of an n-type collector region and electrically short-circuited with the n-type collector region isolated by a p-type isolation diffusion layer in the npn bi-polar transistor.
Hashimoto, Masaru. (1987). Npn transistor with p/n closed loop in contact with collector electrode (U.S. Patent No. 4652900). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4652900
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile