The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 1987
Filed:
Dec. 18, 1984
Anatoly Feygenson, Reading, PA (US);
Semiconductor Division Thomson-CSF Components Corporation, Montgomeryville, PA (US);
Abstract
A method of fabricating bipolar integratable transistors includes a recrystallization step. A monocrystalline epitaxial layer is deposited upon a highly doped substrate and impurities are introduced into a portion of the epitaxial layer to form a first transistor region. A polysilicon layer is deposited upon the surface and a portion of the polycrystalline layer is recrystallized wherein the first transistor region serves as a seed. Impurities are introduced into the recrystallized portion to form a base. An additional polysilicon layer is deposited over the substrate and a portion is recrystallized wherein the base serves as a seed. A second transistor region is formed in the recrystallized portion of the additional polysilicon layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile