The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 17, 1987
Filed:
Nov. 01, 1982
Makoto Yamamoto, Itami, JP;
Tsuyoshi Toyama, Itami, JP;
Hirokazu Harima, Itami, JP;
Ryo Ando, Itami, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A field effect transistor comprises a source region (42) annularly formed to encompass and spaced apart from a drain region (41), whereby a second channel region is formed between the drain region and the source region in the vicinity of the former, while a first channel region is formed in the remaining area thereof, an annular first gate (43) formed bridging above the first channel region and the source region, a second annular gate (45) formed bridging above the first gate and the drain region, and an isolating film (47) formed contiguous to the source region at the side opposite to the channel region. As a result any region is eliminated where the channel region in the vicinity of the drain side end of the first gate (43) is in contact with the isolating film (47). Accordingly, no withstand voltage is restricted thereby and the withstand voltage of the field effect transistor is considerably enhanced.