The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 17, 1987
Filed:
Apr. 15, 1985
Applicant:
Inventors:
Scott H Holmberg, San Ramon, CA (US);
Richard A Flasck, San Ramon, CA (US);
Assignee:
Alphasil, Inc., Fremont, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 237 ; 357-4 ; 357 236 ; 357 30 ; 357 71 ; 357 239 ; 350334 ;
Abstract
An improved method of manufacturing thin film transistors. A gate metal is patterned to form a gate electrode and a drain, gate and source contact pad for the transistor. To reduce shorts and capacitance between the gate and the source or the drain, a dielectric is patterned to form a central portion over a planar portion of the gate region and to cover any exposed gate edges.