The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 17, 1987
Filed:
Apr. 10, 1985
Toshio Mimoto, Nara, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
An input circuit of MOS integrated circuit elements for a signal transmitting circuit having a first enhancement-mode MOS field-effect transistor, the gate thereof being connected to a power source and the drain thereof being connected to a first action signal, a second enhancement-mode MOS field-effect transistor, the drain thereof being connected to said power source, and a depletion-mode MOS field-effect transistor, the gate and source thereof being connected to each other, the source of said first enhancement-mode MOS field-effect transistor being connected to the gate of said second enhancement-mode MOS field-effect transistor, the source of said second enhancement-mode MOS field-effect transistor being connected to the drain of said depletion-mode MOS field-effect transistor, the source of the depletion-mode MOS field-effect transistor being connected to the signal transmitting circuit and a boost capacitor being connected between the gate of said second enhancement-mode MOS field-effect transistor and a second action signal to result in a potential at approximately the level of the power source at a node between the second enhancement-mode MOS field-effect transistor and the depletion-mode MOS field-effect transistor.