The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 17, 1987
Filed:
Jul. 02, 1985
Applicant:
Inventors:
Assignee:
EMI Limited, Hayes, GB;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01N / ;
U.S. Cl.
CPC ...
204416 ; 204419 ; 204 / ; 357 25 ; 29571 ;
Abstract
An ammonia gas sensor comprises a dual gate field effect transistor (FET) in which the two gate electrodes are of platinum deposited respectively by sputtering and evaporation. The gate regions of the two FETs are connected together differentially and the net drain source voltage represents the concentration of ammonia gas to which the sensor is exposed.
Quick Actions:
Robins, Ian. (1987). Gas sensor (U.S. Patent No. 4650561). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4650561
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