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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 4649408 B1

PDFFull Text
Date of Patent:
Mar. 10, 1987

Filed:

Nov. 15, 1983

Charge storage type semiconductor device and method for producing same

Applicant:
Inventors:

Hirokazu Sekine, Fujisawa, JP;

Katuhiko Morimune, Yokohama, JP;

Masaharu Watanabe, Yokosuka, JP;

Nobuo Suzuki, Kamakura, JP;

Assignee:

Tokyo Shibaura Denki Kabushiki Kaisha, Kawasaki, JP;

Attorney:

Finnegan, Henderson, Farabow, Garrett & Dunner

Primary Examiner:

Gene M Munson

Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 24 ; 357 236 ; 357 30 ; 357 41 ; 357 47 ; 357 63 ; 357 64 ;
Abstract

A charge storage type semiconductor device comprising a semiconductor substrate and means for accumulating charge in those portions of the substrate which are located in the vicinity of one of the major surfaces of the substrate. The substrate has a defect region of a high defect density and at least one defect free region having no crystal defects or a low defect density and formed in the vicinity of at least the major surface of the substrate. The defect region prevents unnecessary minority carriers from flowing into charge storage regions.

Find Patent Forward Citations

Sekine, Hirokazu. (1987). Charge storage type semiconductor device and method for producing same (U.S. Patent No. 4649408). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4649408

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