The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 10, 1987
Filed:
Feb. 06, 1985
Yuji Kitamura, Gifu, JP;
Nobuhiro Mitani, Gifu, JP;
Sanyo Electric Co., Ltd., , JP;
Abstract
An insulating film O is formed on a semiconductor substrate S. On the insulating film O, first electrodes M.sub.1 are disposed in parallel and second electrodes M.sub.2 are also disposed in parallel. The first electrodes M.sub.1 are insulated from the second electrodes M.sub.2 and the first electrodes M.sub.1 and the second electrodes M.sub.2 are disposed such that one side of a first electrode M.sub.1 and one side of a second electrode M.sub.2 are adjacent to each other. On the surface regions of the semiconductor substrate S between the respective other sides of the first electrodes M.sub.1 and the second electrodes M.sub.2, high concentration regions S.sub.3 are formed using the first and second electrodes M.sub.1 and M.sub.2 as a mask without causing deviation in positioning. To the first electrodes M.sub.1 and the second electrodes M.sub.2, a first clock pulse .phi..sub.1 and a second clock pulse .phi..sub.2 are applied respectively and electric charges are transferred in response to these clock pulses.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile