The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 10, 1987

Filed:

May. 29, 1985
Applicant:
Inventors:

James G Eden, Champaign, IL (US);

David B Geohegan, Urbana, IL (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
B05D / ;
U.S. Cl.
CPC ...
427 38 ; 427 531 ; 427 541 ; 427 86 ; 118 501 ; 118723 ;
Abstract

A novel method and system for depositing films of selected metallic or semiconductor materials, and particularly of the group III, IV, and V elements, is described which comprises heating a halide compound of the material to produce vapor within a substantially closed chamber, irradiating the vapor with light of preselected wavelength to dissociatively photoionize the vapor into the constituent positive ions of the material and negative halogen ions, and subjecting the photoionized vapor to an electric field to selectively remove the positive ions of the material for plating as a film.


Find Patent Forward Citations

Eden, James. (1987). Photoionization technique for growth of metallic films (U.S. Patent No. 4649059). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4649059

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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