The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 10, 1987
Filed:
Dec. 10, 1985
Applicant:
Inventors:
Louis Menigaux, 91440 Bures sur Yvette, FR;
Pierre Sansonetti, 92290 Chatenay Nalabry, FR;
Assignee:
Other;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ; B44C / ;
U.S. Cl.
CPC ...
156649 ; 2956 / ; 2957 / ; 29580 ; 148175 ; 148186 ; 156655 ; 1566591 ; 156662 ; 357 16 ; 357 17 ; 357 56 ; 357 65 ;
Abstract
Process for manufacturing a semiconductor laser having a buried ribbon. After making a double heterostructure (2, 3, 4, 5) on a substrate (1), there is implanted in the contact layer (5) a p-type doping material, which has the effect of rendering it amorphous. The unit, except for a ribbon, is etched which leaves a mesa. A resumption of epitaxy makes it possible to bury the channel. This resumption does not lead to a crystalline growth on the upper surface of the contact layer, although the annealing that takes place during the resumption of epitaxy gives good ohmic contacts at the level of the implanted layer.