The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 03, 1987

Filed:

Sep. 27, 1984
Applicant:
Inventors:

Volker Graf, Wollerau, CH;

Pierre L Gueret, Richterswil, CH;

Carl A Mueller, Hedingen, CH;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 233 ; 357 232 ; 357 22 ; 357-4 ; 357 15 ; 357 28 ;
Abstract

The transistor comprises two electrodes, source (12) and drain (13), with a semiconductor tunnel channel (11) arranged therebetween. A gate (14) for applying control signals is coupled to the channel. The semiconductor, at low temperatures, behaves like an insulator with a low barrier (some meV) through which charge carriers can tunnel under the influence of an applied drain voltage. The tunnel current can be controlled by a gate voltage V.sub.G which modifies the barrier height between source and drain thereby changing the tunnel probability.


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