The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 03, 1987
Filed:
Aug. 02, 1985
Applicant:
Inventors:
Harold G Parks, Scotia, NY (US);
George E Possin, Schenectady, NY (US);
Assignee:
General Electric Company, Schenectady, NY (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
29571 ; 29591 ; 148D / ; 357 237 ; 156643 ;
Abstract
The gate electrode in an inverted field effect transistor (FET) is fabricated with titanium to provide an FET which is particularly suitable for use as the switching element in a matrix addressed liquid crystal display. More particularly, the resist employed in gate electrode patterning is plasma ashed in an oxygen atmosphere to toughen the titanium gate material and render it more amenable to subsequent processing steps.