The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 24, 1987
Filed:
Apr. 12, 1984
Hans Rehme, Zorneding, DE;
Helmut Schink, Munich, DE;
Siemens Aktiengesellschaft, Berlin and Munich, DE;
Abstract
A method for high-precision imaging of electrical barrier layers (pn-junctions) in semiconductors by means of processing particle beam induced signals created during scanning with a corpuscular microscope, even when the electrical barrier layers are aligned perpendicularly or obliquely relative to a specimen surface. The path of the pn-junctions in cross-sections through semiconductor components may be identified with a high reliability such as within 0.1 .mu.m. Specific point (P(x,y), P(x+.DELTA.x, y+.DELTA.y), M(x,y), N(x,y), F(x,y)) is defined and particle beam induced signals generated along a scan line containing this specific point is compared with reference to particle beam induced signals generated along a further scanning line containing a point within a certain environment of the specific point first chosen with the comparison results being used to localize the electric barrier region profile.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile