The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 24, 1987
Filed:
Oct. 01, 1984
Bernard L Morris, Allentown, PA (US);
Jeffrey J Nagy, Whitehall Township, Lehigh County, PA (US);
Lawrence A Walter, Lower Macungie Township, Lehigh County, PA (US);
AT&T Bell Laboratories, Murray Hill, NJ (US);
Abstract
A field effect transistor circuit generates a reference current that can obtain a desired temperature coefficient. The circuit is self-compensatory with respect to process variations, in that a 'slow' process will produce a higher than normal current, while a 'fast' process will give a lower one. This results in a tight spread of slew-rate, gain, gain-bandwidth, etc. in opamps, comparators, and other linear circuits. A simple adjustment in the circuit allows the temperature coefficient to be made positive or negative if so desired. An illustrative circuit is shown for CMOS technology, but can be applied to other field effect technologies.