The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 17, 1987
Filed:
Nov. 14, 1984
Lodewijk J Van Ruyven, Eindhoven, NL;
Ferd E Williams, deceased, late of Newark, DE (US);
U.S. Philips Corporation, New York, NY (US);
Abstract
In a semiconductor laser with iso-electronic doping or with a quantum-well structure, efficiency is considerably increased by lateral injection. For this purpose, the active region is composed of active layers and barrier layers which are laterally bounded by semiconductor zones preferably degenerate, which inject charge carriers in the longitudinal direction of the active layers. The population inversion in the active layers is further increased in that superinjection occurs at the transition with the degenerate zones.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile