The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 17, 1987
Filed:
Jun. 29, 1983
Junichi Nishizawa, Miyagi, JP;
Tadahiro Ohmi, Miyagi, JP;
Handotai Kenkyu Shinkokai, , JP;
Abstract
An insulated gate electrostatic induction transistor and an integrated circuit employing such an insulating gate electrostatic induction transistor as a drive transistor. A highly resistive channel region is provided on a semiconductor substrate of higher conductivity. A highly doped source region is formed adjacent the channel region, and a gate electrode, separated from the channel region by a thin insulating layer, is formed above the channel region. The gate electrode has a high diffusion potential with respect to the source region. The depth of the highly doped source region is less than that of a distribution of carriers in an inversion layer formed under the gate electrode.