The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 17, 1987
Filed:
Apr. 17, 1985
Yoshihisa Mizutani, Tokyo, JP;
Syunzi Yokogawa, Yokohama, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
A method for manufacturing a semiconductor device comprises a first step of forming a field insulation layer on a p-type semiconductor substrate and a second step of forming an n.sup.+ -type region and n-type region in an element area surrounded by the field insulation layer. In particular, the second step includes a step of forming, in the element area, a recess having an inclined portion and flat bottom portion, a step of forming an SiO.sub.2 film of a uniform thickness on the inclined portion and flat bottom portion, and a step of ion-implanting an n-type impurity into the substrate through the SiO.sub.2 and effecting an annealing process.