The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 17, 1987
Filed:
Nov. 28, 1983
Applicant:
Inventors:
Haruo Kawata, Atsugi, JP;
Hidetoshi Nishi, Yamato, JP;
Assignee:
Fujitsu Limited, Kawasaki, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
2957 / ; 29571 ; 148-15 ; 148187 ; 148D / ; 148D / ; 357 232 ; 357 91 ;
Abstract
High transconductance is obtained in GaAs FET's by forming a channel layer having a carrier concentration monotonously decreasing from the interface of the channel layer and a control gate toward the interface of the channel layer and the substrate it is formed in. This is established by ion implantation of the channel layer through an insulating layer, preferably an AlN layer, on a GaAs substrate. An AlN layer is preferable since it has no adverse effects on the GaAs substrate during ion implantation and the following heat treatment, allowing higher uniformity of the threshold voltages of the FET's.