The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 17, 1987
Filed:
Aug. 28, 1985
Satoshi Maeda, Yokohama, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
A method for manufacturing a semiconductor device is disclosed which comprises the steps of forming an element isolating region of a first conductivity type, forming an insulating film on the surface of the element region which is isolated by the element isolating region, selectively forming a gate electrode on the insulating film, doping an impurity of a second conductivity type into the element region as a first doping step with the gate electrode and element isolating region as masks; sequentially forming a oxidizable first film and a second film on the whole surface of the resultant structure, anisotropically etching the second film to partly leave the second film area on that portion of the oxidizable first film which is located on the side wall of the gate electrode, doping an impurity of a second conductivity type with the remaining second film, gate electrode and element isolating region as masks, removing the remaining second film, and converting the oxidizable first film to an oxide film.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile