The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 10, 1987
Filed:
Dec. 07, 1984
Peter Roggwiller, Riedt-Neerach, CH;
Roland Sittig, Umiken, CH;
BBC Brown, Boveri & Company Limited, Baden, CH;
Abstract
For improving the dynamic characteristics of semiconductor components required to absorb high reverse voltages only in one polarity (diodes, reverse-conducting thyristors and asymmetric thyristors), in many cases structures having an n base consisting of two layers are used. In order to improve the reverse-voltage capability, it is proposed, in a semiconductor component having at least one pn.sup.- n sequence of layers, to select the thickness (S) and the doping of an n stop layer (4) in such a way that the following applies: ##EQU1## where e=elementary charge, .epsilon.=dielectric constant of the semiconductor, N.sub.D =donor concentration, X=path coordinate, 0.8.ltoreq.k.ltoreq.1.0 and E.sub.n =field strength at the n.sup.- n junction. The effect of this measure is that the geometric conditions of the edge chamfering are less stringent. The edge can also be shaped by means of conventional etching processes.