The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 10, 1987
Filed:
Oct. 17, 1984
Applicant:
Inventor:
Terence E Magee, Fulbourn, GB;
Assignee:
Standard Telephones & Cables, London, GB;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 35 ; 357 36 ; 357 42 ; 357 43 ; 357 89 ;
Abstract
A bipolar lateral transistor is formed in a highly doped p.sup.- -type well (13) the base contained in a lightly doped n.sup.- -type well (12) the collector in a very lightly doped p.sup.-- -type substrate (11). The arrangement is such that the boundary of the collector/base depletion region is distributed so that the non-depleted base region is wide below the emitter but very narrow at the surface. This defines a narrow active base region in the lateral emitter-collector path thus ensuring that the transistor operates predominantly in its lateral rather than its vertical mode. The structure is compatible with conventional CMOS and NMOS processing techniques.