The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 03, 1987
Filed:
Jun. 19, 1984
Hidenori Gion, Okayama, JP;
Kenji Kubota, Okayama, JP;
Michihiro Nakamura, Soja, JP;
Makoto Yano, Kurashiki, JP;
Kuraray Co., Ltd., Okayama, JP;
Abstract
An ion activity monitoring device is disclosed, having a semi-conductor device including an ion-sensitive field-effect transistor, for detecting the activity of ions in a liquid medium of interest, and a temperature sensor, for detecting the temperature of the liquid medium of interest, a constant current circuit for supplying a drain current of a particular value to the transistor, and a processing circuit for calculating the concentration of the ions in the liquid medium of interest. The drain current is of a value satisfying the relationship of .vertline.Id/.beta..vertline..ltoreq.0.10 volt.sup.2, wherein Id represents the drain current and .beta. represents the channel characteristic value of the ion-sensitive field-effect transistor. A method for operating the transistor is also disclosed.