The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 03, 1987
Filed:
Feb. 28, 1985
Applicant:
Inventors:
Ryoichi Sato, Kashiwa, JP;
Toshio Mimoto, Nara, JP;
Assignee:
Sharp Kabushiki Kaisha, Osaka, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G05F / ;
U.S. Cl.
CPC ...
323313 ; 323314 ;
Abstract
Semiconductor circuit of MOS transistors for generation of the desired reference voltage over a wide range with almost no dependence on the power voltage. An enhancement type MOS transistor and 1st depression type MOS transistor are connected in series across the power voltage, and a 2nd depression type MOS transistor and resistance component connected are in series across the power voltage. The above 1st depression type MOS transistor is connected to the gate of the 2nd depression type MOS transistor, and the reference voltage is derived from the connection point of the 2nd depression type MOS transistor and the resistance component.