The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 03, 1987
Filed:
Dec. 28, 1984
Applicant:
Inventors:
Shigeru Okamura, Ebina, JP;
Takao Taguchi, Isehara, JP;
Assignee:
Fujitsu Limited, Kanagawa, JP;
Primary Examiner:
Int. Cl.
CPC ...
G01N / ;
U.S. Cl.
CPC ...
2504922 ; 250398 ;
Abstract
This invention relates to an ion implantation apparatus and method for maskless processing of substrate, and more particularly, to form ion implanted pattern by selectively scanning a focused ion beam on the surface of a processing substrate. The timing of the apparatus is controlled by a variable frequency clock pulse. By using the variable frequency oscillator, a clock frequency can be controlled continuously. So, the ion implantation pattern is easily controlled by the clock frequency and scanning number with high accuracy compared to a prior art.