The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 27, 1987
Filed:
Apr. 24, 1984
Haruki Kurihara, Tokyo, JP;
Minoru Sagara, Yokohama, JP;
Kenji Matumoto, Yokohama, JP;
Hideo Tamura, Kawasaki, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
A semicondcutor laser comprises a semiconductor base structure provided with an etched channel, and a plurality of semiconductor layers laminated on the base structure by a liquid-phase epitaxial growth method and performing a laser function. The base structure includes a GaAs substrate of one conductivity type, a layer formed on the substrate for preventing deformation of the channel, and an oxidation-preventing layer formed on the channel deformation-preventing layer. A current-blocking layer consisting of GaAs of the opposite conductivity type may be formed between the GaAs substrate and the channel deformation-preventing layer. Further, another layer for preventing the channel deformation may be provided between the GaAs substrate and the current-blocking layer. In the invented semiconductor laser, the semiconductor layers are epitaxially grown sufficiently on the base structure, and the channel deformation can be sufficiently suppressed.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile