The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 27, 1987
Filed:
Nov. 30, 1983
Shigeo Mizugaki, Itami, JP;
Tsunenori Umeki, Itami, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A semiconductor read-only memory device includes first and second MOS field effect mode transistors (MOSFET) as memory elements storing either one of binary values of binary information. The first MOSFET has such a relatively long effective gate length that it becomes conductive upon receipt of a first relatively high gate voltage applied thereto as a memory selection signal and becomes non-conductive upon receipt of a second relatively low gate voltage. The second MOSFET, on the other hand, has such a relatively short effective gate length that it becomes conductive whether the first or second gate voltage is applied thereto.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile