The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 27, 1987
Filed:
Apr. 30, 1984
John M Neilson, Norristown, PA (US);
Norbert W Brackelmanns, Ironia, NJ (US);
RCA Corporation, Princeton, NJ (US);
Abstract
A MOSFET device comprises a semiconductor wafer which includes a drain region of first conductivity type contiguous with a wafer surface. A diffused body region of second conductivity type extends into the wafer from the wafer surface so as to form a body/drain PN junction which has a polygonally-shaped intercept at the wafer surface. A plurality of source regions of first conductivity type extends into the wafer from the wafer surface within the boundary of the body region. The source regions define a plurality of channel regions, a contact area, and at least one shunt region at the surface of the body region. Each shunt region extends from the contact area to one of the corners of the body/drain PN junction polygonal intercept. A source electrode contacts the body region contact area and each of the source regions adjacent thereto.