The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 27, 1987

Filed:

Apr. 22, 1985
Applicant:
Inventor:

Shigehiko Yamamoto, Tokorozawa, JP;

Assignee:

Hitachi, Ltd., Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B05D / ;
U.S. Cl.
CPC ...
427 10 ; 118688 ; 118689 ; 118690 ; 118691 ; 118720 ; 118721 ; 118723 ; 118726 ; 156D / ; 156601 ; 156611 ; 219271 ; 219272 ; 427 38 ; 4272481 ;
Abstract

A thin film formation technique and apparatus therefor which comprises converting a molecular beam effusing from a molecular beam source equipment to a pulsed molecular beam; introducing the pulsed molecular beam into an ionization chamber in such a fashion that the most of the pulsed molecular beam is caused to be incident to a substrate while a part is ionized by the ionization chamber; amplifying the ion or the electron converted from the ion and converting it to an electrical signal; calculating the flux and speed of the molecular beam; controlling the molecular beam effusing from the molecular beam source equipment on the basis of the calculation information; and forming the thin film on the substrate.


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