The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 13, 1987
Filed:
Feb. 21, 1984
Applicant:
Inventors:
Tomoo Yanase, Tokyo, JP;
Hiroyoshi Rangu, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 17 ; 372 50 ;
Abstract
A surface-emitting semiconductor light emitting element, such as a laser or a light emitting diode, having at least one active light emitting layer on a semi-insulating substrate, with p-type and n-type semiconductor regions also on the substrate and in contact with opposite side faces of the active layer. The active layer has a narrower band gap than the semiconductor regions. The light emitting region may comprise a multilayer structure of plural active light emitting layers sandwiched between alternating p-type and n-type semiconductor layers.