The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 1987
Filed:
Apr. 10, 1986
James A Cooper, Jr, West Lafayette, IN (US);
Purdue Research Foundation, West Lafayette, IN (US);
Abstract
A memory device includes a relative lower bandgap energy first semiconductor layer, a relatively higher bandgap energy second semiconductor layer on the first, an alloy source rectifying to the first layer, a well for storing charge and a gate for controlling charge flow between the source and the well. The gate is formed on the second layer, as is a field plate for controlling the storage charge in the well. In one embodiment, a buried channel field effect transistor is combined with the basic memory device, with the charge content of the well controlling current flow between the source and drain of the buried channel FET.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile