The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 1987
Filed:
Mar. 04, 1985
Applicant:
Inventors:
Lee-Lean Shu, Milpitas, CA (US);
Tai C Shyu, San Jose, CA (US);
Patrick T Chuang, Cupertino, CA (US);
Assignee:
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G05F / ;
U.S. Cl.
CPC ...
307297 ; 3072 / ; 307491 ; 307496 ; 307548 ; 323313 ;
Abstract
A low power, low output impedance, CMOS voltage reference with high source/sink current driving capability. A CMOS current mirror preamplifier includes matched transistor pairs having their W/L ratios scaled to reduce the level of current to the subthreshold region. A CMOS source follower output stage also has its transistors biased in the subthreshold region. Circuitry for protecting the preamplifier from the effects of supply voltage and output voltage bumps is also disclosed.