The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 06, 1987

Filed:

May. 04, 1984
Applicant:
Inventors:

Masataka Hirose, Hiroshima, JP;

Tsuyoshi Ueno, Fujisawa, JP;

Katsumi Suzuki, Tokyo, JP;

Assignee:

Kabushiki Kaisha Toshiba, Kawasaki, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C / ;
U.S. Cl.
CPC ...
118719 ; 118723 ; 118 501 ;
Abstract

An amorphous silicon film forming apparatus forms an amorphous silicon film on a substrate. The apparatus is provided with a sealed vessel whose inside space is defined as a reaction chamber. A gas inlet pipe for introducing a gas containing SiH4 into the reaction chamber is connected to the vessel. A facing electrode provided in the reaction chamber and a power source connected to the facing electrode convert in a plasma generating region the gas introduced into the reaction chamber by the gas inlet pipe into plasma. A conductive mesh structure is disposed in the reaction chamber so as to surround the plasma generating region.


Find Patent Forward Citations

Hirose, Masataka. (1987). Amorphous silicon film forming apparatus (U.S. Patent No. 4633809). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4633809

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…