The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 1986
Filed:
Jul. 20, 1984
Charles B Morrison, Torrance, CA (US);
Luis Figueroa, Torrance, CA (US);
Andre Burghard, Torrance, CA (US);
TRW Inc., Redondo Beach, CA (US);
Abstract
A semiconductor laser diode structure operable at high power and brightness levels and having a relatively low threshold current, high efficiency, good mode stability, and reduced temperature sensitivity. The disclosed embodiments have twin parallel channels formed in a p type substrate, and employ an n type blocking layer to confine current to a region between and including the channels. The structure includes first and second inactive cladding layers, and an active layer forming a diode junction. The first or lower inactive layer is thinner in the region between the channels, and this results in a higher forward-bias voltage at the center of the active layer, thereby focusing the current near the central position. This current focusing mechanism, which is enhanced by the optional use of a curved active layer, results in the improved characteristics of the structure. By selecting the effective width of a contact stripe overlying the second or upper inactive layer, single or multiple optical gain filaments may be produced.