The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 1986
Filed:
Jun. 08, 1984
James A Benjamin, Waukesha, WI (US);
Robert W Lade, Fort Myers, FL (US);
Herman P Schutten, Milwaukee, WI (US);
Eaton Corporation, Cleveland, OH (US);
Abstract
A power JFET (2) has a common drift region (4) between a pair of spaced first and second stacks (6, 8) of alternating conductivity type layers (10-14 and 15-19) forming a plurality of channels (11, 13, 16 and 18). The JFET has an ON state conducting bidirectional current horizontally through the common drift region and the channels. The channels are stacked vertically, and the JFET has an OFF state blocking current flow through the channels due to vertical depletion pinch-off. Field shaping and high blocking voltage capability are provided. Particular main terminal and gate structure is disclosed.