The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 1986
Filed:
Nov. 22, 1983
Applicant:
Inventors:
Masanori Tanabe, Hitachi, JP;
Kanji Kawakami, Mito, JP;
Assignee:
Hitachi, Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03K / ; H03K / ; H01L / ; G01L / ;
U.S. Cl.
CPC ...
307308 ; 307304 ; 307119 ; 357 26 ; 328-5 ; 3403 / ; 340562 ; 73777 ; 73780 ;
Abstract
The drain voltage of an IGFET having a channel responsive to the change in physical quantity to be measured is negatively fed back to the gate terminal of the IGFET. The negative feedback loop includes series connection of a first amplifier having an amplification factor larger than unity and a second amplifier having an amplification factor smaller than unity. The interconnection point between the first and the second amplifiers is connected to the output terminal. There is provided a stable, highly sensitive and highly reliable semiconductor sensor.