The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 30, 1986

Filed:

Feb. 08, 1985
Applicant:
Inventors:

Prem Nath, Rochester, MI (US);

Timothy J Barnard, Lake Orion, MI (US);

Dominic Crea, Mt. Clemens, MI (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
136256 ; 136249 ; 136258 ; 29572 ; 357 30 ; 357 65 ; 357 71 ; 427 74 ;
Abstract

An improved photovoltaic device exhibiting increased tolerance of shorting and shunting defects includes: a substrate having a semiconductor body disposed thereupon, a current collecting structure such as a bus-grid structure disposed upon the semiconductor body and a transparent conductive electrode overlying the semiconductor body and the current collecting structure. The photovoltaic device may also include a layer of low electrical conductivity material disposed beneath at least portions of the current collecting structure to prevent electrical contact between said structure and defective regions of the device occuring therebelow. Also disclosed are methods for the fabrication of the improved device.


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