The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 1986
Filed:
Oct. 17, 1985
Minoru Kawakami, Fukuoka City, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
In a method of manufacturing a glass passivation type semiconductor device wherein a silicon semiconductor substrate of a first conductivity type is formed with a p-n junction by diffusing an impurity of a second conductivity type thereinto, recesses which reach the p-n junction are provided to expose the p-n junction in the recesses, and the exposed parts of the p-n junction are covered with a low-melting glass; a method of manufacturing a glass passivation type semiconductor device according to this invention consists in that, using a printing mask, a glass is deposited on a whole surface of a wafer except for an outer periphery of the wafer or predetermined parts thereof necessary for alingment at a subsequent step, with the glass films at the bottoms of said recesses and the p-n junction parts being rendered at least 10 .mu.m thick and glass films at the other parts being rendered 4-10 .mu.m thick, and that unnecessary portions of said glass films are thereafter removed by etching, using a photoresist as a mask.